IIT Publications Search

Publications
2020
Bourlier Y., Bouttemy M., Fregnaux M., Patard O., Gamarra P., Piotrowicz S., Delage S., Etcheberry A.
In-depth analysis of InAlN/GaN HEMT heterostructure after annealing using angle-resolved X-ray photoelectron spectroscopy
Surface and Interface Analysis, vol. 52, (no. 12), pp. 914-918
DOI 10.1002/sia.6857 Conference Paper Journal
2019
Potier C., Jacquet J.-C., Lacam C., Michel N., Dua C., Oualli M., Delage S.L., Piotrowicz S., Chang C., Patard O., Trinh-Xuan L., Gruenenpuett J., Gamarra P., Altuntas P., Chartier E.
10W Ka Band MMIC Power Amplifiers based on InAlGaN/GaN HEMT Technology
2019 49th European Microwave Conference, EuMC 2019, pp. 824-827
DOI 10.23919/EuMC.2019.8910887 Conference Paper Conference
2019
Aroulanda S., Patard O., Altuntas P., Michel N., Pereira J., Lacam C., Gamarra P., Delage S.L., Defrance N., De Jaeger J.-C., Gaquiere C.
Cl2/Ar based atomic layer etching of AlGaN layers
Journal of Vacuum Science and Technology A, vol. 37, (no. 4)
DOI 10.1116/1.5090106 Article Journal
2019
Malmros A., Gamarra P., Thorsell M., Hjelmgren H., Lacam C., Delage S.L., Zirath H., Rorsman N.
Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs with an AlGaN Back Barrier
IEEE Transactions on Electron Devices, vol. 66, (no. 1), pp. 364-371
DOI 10.1109/TED.2018.2881319 Article Journal
2019
Mohamad R., Chauvat M.P., Kret S., Gamarra P., Delage S., Hounkpati V., Lacam C., Chen J., Ruterana P.
The critical role of N-vacancy on chemical composition fluctuations and degradation of InAlN layer
Journal of Applied Physics, vol. 125, (no. 21)
DOI 10.1063/1.5088109 Article Journal
2018
Mohamad R., Bere A., Hounkpati V., Gamarra P., Chen J., Ruterana P.
A Theoretical Investigation of the Miscibility and Structural Properties of InxAlyGa1−x−yN Alloys
Physica Status Solidi (B): Basic Research, vol. 255, (no. 5)
DOI 10.1002/pssb.201700394 Article Journal
2018
Potier C., Piotrowicz S., Patard O., Gamarra P., Altuntas P., Chartier E., Dua C., Jacquet J.C., Lacam C., Michel N., Oualli M., Delage S.L., Chang C., Gruenenpuett J.
First results on Ka band MMIC power amplifiers based on InAlGaN/GaN HEMT technology
International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMIC 2018 - Proceedings
DOI 10.1109/INMMIC.2018.8430000 Conference Paper Conference
2018
Piotrowicz S., Jacquet J.-C., Gamarra P., Patard O., Dua C., Chartier E., Michel N., Oualli M., Lacam C., Potier C., Altuntas P., Delage S.
InAlGaN/GaN with AlGaN back-barrier HEMT technology on SiC for Ka-band applications
International Journal of Microwave and Wireless Technologies, vol. 10, (no. 1), pp. 39-46
DOI 10.1017/S175907871700112X Article Journal
2018
Bourlier Y., Bouttemy M., Patard O., Gamarra P., Piotrowicz S., Vigneron J., Aubry R., Delage S., Etcheberry A.
Investigation of InAlN layers surface reactivity after thermal annealings: A complete XPS study for HEMT
ECS Journal of Solid State Science and Technology, vol. 7, (no. 6), pp. P329-P338
DOI 10.1149/2.0181806jss Article Journal
2018
Minj A., Ammar H.B., Cros A., Garro N., Gamarra P., Delage S.L., Ruterana P.
Probing the Local Electrical Properties of Al(In,Ga)N by Kelvin Probe Force Microscopy
Physica Status Solidi (B): Basic Research, vol. 255, (no. 5)
DOI 10.1002/pssb.201700427 Article Journal
2018
Oualli M., Dua C., Patard O., Altuntas P., Piotrowicz S., Gamarra P., Lacam C., Jacquet J.-C., Teisseire L., Lancereau D., Chartier E., Potier C., Delage S.L.
Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes
Microelectronics and Reliability, vol. 88-90, pp. 418-422
DOI 10.1016/j.microrel.2018.07.142 Article Journal
2017
Vilalta-Clemente A., Naresh-Kumar G., Nouf-Allehiani M., Gamarra P., di Forte-Poisson M.A., Trager-Cowan C., Wilkinson A.J.
Cross-correlation based high resolution electron backscatter diffraction and electron channelling contrast imaging for strain mapping and dislocation distributions in InAlN thin films
Acta Materialia, vol. 125, pp. 125-135
DOI 10.1016/j.actamat.2016.11.039 Article Journal
2017
Ben Ammar H., Minj A., Gamarra P., Lacam C., Tordjman M., di Forte-Poisson M.A., Morales M., Chauvat M.P., Ruterana P.
Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure
Physica Status Solidi (A) Applications and Materials, vol. 214, (no. 4)
DOI 10.1002/pssa.201600441 Article Journal
2017
Rzin M., Routoure J.-M., Guillet B., Mechin L., Morales M., Lacam C., Gamarra P., Ruterana P., Medjdoub F.
Impact of Gate-Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs
IEEE Transactions on Electron Devices, vol. 64, (no. 7), pp. 2820-2825
DOI 10.1109/TED.2017.2703809 Article Journal
2017
Gamarra P., Lacam C., Tordjman M., Medjdoub F., di Forte-Poisson M.-A.
In-situ passivation of quaternary barrier InAlGaN/GaN HEMTs
Journal of Crystal Growth, vol. 464, pp. 143-147
DOI 10.1016/j.jcrysgro.2016.11.014 Article Journal